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Please use this identifier to cite or link to this item: http://hdl.handle.net/10928/599

Title: Geを蒸着したSi(110)-16×2表面での特異な表面再構成構造
Other Titles: Unique surface structure formations on a Ge-covered Si(110)-16 × 2 surface
Authors: 横山, 有太
Keywords: Surface nano structure
Surface reconstruction
Scanning tunneling microscopy
Germanium silicon alloys
Issue Date: 1-Dec-2014
Publisher: 成蹊大学理工学部
Abstract: Si-Ge structures forming new shapes on a Si(110)-16 × 2 reconstructed surface were investigated via scanning tunneling microscopy. Pyramidal-shaped Si–Ge nanoislands lying along the <1 11> directions were formed on the striped structure at high Ge coverage surface. However, when a single monolayer of Ge was deposited on the Si(110)-16 × 2 surface, single-domain of 16 × 2 striped structure disappeared, and a new double-domain striped structure was formed over the surface along directions that differed from original directions. This structure represents a new Si-Ge striped structure that forms by the mixing of Ge and Si due to high temperature annealing. These results indicate that the surface structure changes specifically with a trace of Ge.
URI: http://hdl.handle.net/10928/599
Appears in Collections:第51巻第2号

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